AP98T06GI-HF Advanced Power Electronics Corp., AP98T06GI-HF Datasheet

AP98T06GI-HF

Manufacturer Part Number
AP98T06GI-HF
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP98T06GI-HF

Vds
60V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
5
Qg (nc)
88
Qgs (nc)
14
Qgd (nc)
43
Id(a)
67
Pd(w)
41.6
Configuration
Single N
Package
TO-220CFM
▼ Simple Drive Requirement
▼ Low On-resistance
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for
commercial-industrial through hole applications.
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maixmum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
GS
GS
G
@ 10V
@ 10V
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Halogen-Free Product
-55 to 150
-55 to 150
G
Rating
BV
R
I
D
41.6
D
+20
260
60
67
42
DS(ON)
S
DSS
AP98T06GI-HF
Value
65
3
TO-220CFM(I)
200910191
5mΩ
Units
Units
℃/W
℃/W
60V
67A
W
V
V
A
A
A
1

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AP98T06GI-HF Summary of contents

Page 1

... Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maixmum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP98T06GI-HF Halogen-Free Product BV 60V DSS R 5mΩ DS(ON) I 67A TO-220CFM(I) S Rating Units 60 ...

Page 2

... AP98T06GI-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... Fig 2. Typical Output Characteristics 2.4 I =40A D V =10V G 2.0 1.6 1.2 0.8 0 -50 Fig 4. Normalized On-Resistance 1.6 1 0.8 0.4 0.0 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. AP98T06GI- 8.0 V 7 Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 ...

Page 4

... AP98T06GI- =30V DS V =36V 48V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 Operation in this area limited by 100 R DS(ON = Single Pulse 0.1 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...

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