AP98T06GP Advanced Power Electronics Corp., AP98T06GP Datasheet
AP98T06GP
Specifications of AP98T06GP
Related parts for AP98T06GP
AP98T06GP Summary of contents
Page 1
... Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maixmum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter 3 @ 10V GS 1 Parameter AP98T06GP RoHS-compliant Product BV 60V DSS R 5mΩ DS(ON) I 80A D G TO-220( Rating Units ...
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... AP98T06GP Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...
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... Fig 2. Typical Output Characteristics 2.4 I =40A D V =10V G 2.0 1.6 1.2 0.8 0 -50 Fig 4. Normalized On-Resistance 1.6 1 0.8 0.4 0.0 -50 1.2 1.4 Fig 6. Gate Threshold Voltage v.s. AP98T06GP 8.0 V 7 Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 ...
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... AP98T06GP Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 Operation in this area limited by R DS(ON) 100 = Single Pulse 1 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...