AP9465BGH Advanced Power Electronics Corp., AP9465BGH Datasheet

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... Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter 1 Parameter AP9465BGH/J RoHS-compliant Product BV 40V DSS R 32mΩ DS(ON) I 20A □ ...

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... AP9465BGH/J Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

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... Fig 2. Typical Output Characteristics 2.0 I =12A D V =10V G 1.6 1.2 0.8 0.4 -50 10 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.2 1.1 1.0 C 0.9 0.8 0.7 0.6 1.6 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9465BGH/J 10V o T =150 .0V 5.0V 4 =3.0V G 1.0 2.0 3.0 4 Drain-to-Source Voltage ( 100 Junction Temperature ( 100 o T ...

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... AP9465BGH =12A =20V DS V =24V DS V =32V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 = Single Pulse 0 0 ,Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area =25 ...