AP9465BGJ Advanced Power Electronics Corp., AP9465BGJ Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP9465BGJ

Manufacturer Part Number
AP9465BGJ
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9465BGJ

Vds
40V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
32
Rds(on) / Max(m?) Vgs@4.5v
45
Qg (nc)
6.6
Qgs (nc)
1.5
Qgd (nc)
4
Id(a)
20
Pd(w)
20.8
Configuration
Single N
Package
TO-251
▼ Lower Gate Charge
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications.
The through-hole version (AP9465BGJ) are available for low-profile
applications.
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Rthj-a
Data & specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
RoHS-compliant Product
3
-55 to 150
-55 to 150
G
Rating
BV
R
I
D
D
20.8
0.17
+20
40
20
12
60
DS(ON)
S
DSS
G
AP9465BGH/J
Value
62.5
6.0
110
D
S
TO-251(J)
TO-252(H)
32mΩ
200903092
Units
W/℃
Units
℃/W
℃/W
℃/W
40V
20A
W
V
V
A
A
A
1

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AP9465BGJ Summary of contents

Page 1

... The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications. The through-hole version (AP9465BGJ) are available for low-profile applications. Absolute Maximum Ratings Symbol ...

Page 2

AP9465BGH/J Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate ...

Page 3

T = 0.0 1.0 2.0 3 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics ...

Page 4

AP9465BGH =12A =20V DS V =24V DS V =32V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 =25 C ...

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