AP9465GEM Advanced Power Electronics Corp., AP9465GEM Datasheet

Page 1

... Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice RoHS-compliant Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 Parameter Parameter 3 AP9465GEM BV 40V DSS R 25mΩ DS(ON Rating Units 40 V +16 V 7 ...

Page 2

... AP9465GEM Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... V Fig 2. Typical Output Characteristics 1 =10V G 1.4 1.0 0 Fig 4. Normalized On-Resistance v.s. Junction Temperature 50.0 40.0 30 20.0 10 1.2 Fig 6. On-Resistance vs. Drain Current AP9465GEM o 10V T = 150 C A 7.0V 5.0V 4.5V V =3. Drain-to-Source Voltage ( 100 125 150 Junction Temperature ( =4.5V GS ...

Page 4

... AP9465GEM Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area 40 V =5V DS ...

Page 5

... ADVANCED POWER ELECTRONICS CORP. Package Outline : SO Part Marking Information & Packing : SO-8 9465GEM YWWSSS SYMBOLS α A 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Number Package Code ...