AP9466GS Advanced Power Electronics Corp., AP9466GS Datasheet

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness

AP9466GS

Manufacturer Part Number
AP9466GS
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9466GS

Vds
40V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
13.5
Rds(on) / Max(m?) Vgs@4.5v
21
Qg (nc)
13.5
Qgs (nc)
2.6
Qgd (nc)
9.4
Id(a)
40
Pd(w)
36.7
Configuration
Single N
Package
TO-263
▼ Low On-resistance
▼ Single Drive Requirement
▼ Fast Switching Characteristics
Data and specifications subject to change without notice
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
The Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-263 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
STG
J
DS
GS
D
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Parameter
Parameter
1
GS
GS
G
@ 10V
@ 10V
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Max.
Max.
RoHS-compliant Product
-55 to 150
-55 to 150
Rating
BV
R
I
D
± 20
36.7
0.29
150
40
40
25
DS(ON)
G D
DSS
Value
3.4
62
S
AP9466GS
TO-263(S)
200727071-1/4
13.5mΩ
Units
W/℃
℃/W
℃/W
40V
40A
Unit
W
V
V
A
A
A

Related parts for AP9466GS

AP9466GS Summary of contents

Page 1

... Thermal Resistance Junction-case Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice RoHS-compliant Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter Max. Max. AP9466GS BV 40V DSS R 13.5mΩ DS(ON) I 40A TO-263(S) Rating Units 40 V ± ...

Page 2

... AP9466GS Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

Page 3

... Fig 2. Typical Output Characteristics 2.2 I =26A D V =10V G 1.8 1.4 1.0 0.6 10 -50 Fig 4. Normalized On-Resistance 2 1.8 1.6 1 1.2 1 0.8 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. AP9466GS 10V o C 7.0V 5.0V 4.5V V =3. Drain-to-Source Voltage ( 100 150 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 Junction Temperature ( ...

Page 4

... AP9466GS 14 I =26A =20V DS V =24V =32V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 0.1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS ...

Page 5

... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-263 Part Marking Information & Packing : TO-263 XXXXXS 9466GS YWWSSS YWWSSS θ θ Part Number Part Number Package Code Package Code LOGO ...

Related keywords