AP9467AGM Advanced Power Electronics Corp., AP9467AGM Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP9467AGM

Manufacturer Part Number
AP9467AGM
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9467AGM

Vds
40V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
11.5
Rds(on) / Max(m?) Vgs@4.5v
20
Qg (nc)
9
Qgs (nc)
2
Qgd (nc)
5
Id(a)
11
Pd(w)
2.5
Configuration
Single N
Package
SO-8

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
AP9467AGM
Quantity:
45 000
Part Number:
AP9467AGM-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
▼ Low On-resistance
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
DS
GS
D
STG
J
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
3
3
D
SO-8
D
D
D
S
S
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
G
3
RoHS-compliant Product
-55 to 150
-55 to 150
Rating
BV
R
I
D
+20
8.8
2.5
40
11
50
DS(ON)
DSS
G
Value
50
AP9467AGM
11.5mΩ
D
S
200905132
Units
℃/W
40V
11A
Unit
W
V
V
A
A
A
1

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AP9467AGM Summary of contents

Page 1

... Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 Parameter Parameter 3 AP9467AGM RoHS-compliant Product BV 40V DSS R 11.5mΩ DS(ON) I 11A Rating Units 40 +20 11 8.8 50 2.5 -55 to 150 ...

Page 2

... AP9467AGM Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... Fig 2. Typical Output Characteristics 1 =10V G 1.4 0.9 0 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 1 0.8 0.4 0.0 1 1.2 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9467AGM 150 7.0 V 6 =4. Drain-to-Source Voltage ( 100 Junction Temperature ( ...

Page 4

... AP9467AGM Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) Fig 11. Switching Time Waveform ...

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