AP9468GS Advanced Power Electronics Corp., AP9468GS Datasheet - Page 3

• Manufacturer Part Number: AP9468GS
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP9468GS

• Vds: 40V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 7
• Rds(on) / Max(m?) Vgs@4.5v: 9
• Qg (nc): 36
• Qgs (nc): 4
• Qgd (nc): 20
• Id(a): 80
• Pd(w): 89
• Configuration: Single N
• Package: TO-263

240
200
160
120
80
40
40
30
20
10
8
7
6
5
4
0
0
0.0
2
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
V
V
Reverse Diode
GS
DS
V
2.0
0.4
4
SD
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
T
j
, Source-to-Drain Voltage (V)
=150
o
C
4.0
0.8
6
T
C
I
T
D
=25
C
=30A
T
=25
j
o
=25
C
o
C
6.0
1.2
o
8
C
V
G
7.0 V
5.0V
4.5 V
= 3.0 V
10V
8.0
1.6
10
240
200
160
120
2.0
1.6
1.2
0.8
0.4
8.0
7.0
6.0
5.0
4.0
80
40
0
0.0
Fig 4. Normalized On-Resistance
25
Fig 2. Typical Output Characteristics
0
Fig 6. On-Resistance vs.
V
I
D
G
=45A
=10V
v.s. Junction Temperature
Drain Current
V
2.0
50
DS
T
20
, Drain-to-Source Voltage (V)
j
I
, Junction Temperature (
D
, Drain Current (A)
4.0
75
T
C
=150
40
V
V
GS
GS
6.0
o
100
C
=4.5V
=10V
AP9468GS
60
8.0
125
o
C)
V
7 .0V
5.0V
4.5 V
10V
G
=3.0V
10.0
150
80
3