AP9468GS Advanced Power Electronics Corp., AP9468GS Datasheet - Page 4

• Manufacturer Part Number: AP9468GS
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP9468GS

• Vds: 40V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 7
• Rds(on) / Max(m?) Vgs@4.5v: 9
• Qg (nc): 36
• Qgs (nc): 4
• Qgd (nc): 20
• Id(a): 80
• Pd(w): 89
• Configuration: Single N
• Package: TO-263

AP9468GS
1000
100
10
240
200
160
120
1
80
40
16
12
0
8
4
0
0.1
0
0
Fig 9. Maximum Safe Operating Area
Fig 11. Transfer Characteristics
Fig 7. Gate Charge Characteristics
Single Pulse
T
C
=25
1
V
V
o
Q
V
DS
C
20
DS
G
GS
=5V
, Total Gate Charge (nC)
,Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
1
2
V
T
V
40
DS
V
3
j
DS
=25
I
DS
=20V
D
=25V
=30A
=30V
o
C
10
4
60
T
j
5
=150
100ms
100us
10ms
1ms
DC
o
C
100
80
6
Fig 10. Effective Transient Thermal Impedance
10000
1000
0.01
100
0.1
0.00001
1
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
4.5V
0.02
0.01
0.05
Single Pulse
V
Duty factor = 0.5
0.1
0.2
G
5
0.0001
Q
V
GS
DS
9
,Drain-to-Source Voltage (V)
t , Pulse Width (s)
0.001
Q
Q
13
Charge
G
GD
17
0.01
P
DM
Duty Factor = t/T
Peak T
21
j
= P
t
f=1.0MHz
0.1
DM
T
x R
thjc
25
+ T
Q
C
C
C
C
iss
oss
rss
1
29
4