AP9970GK Advanced Power Electronics Corp., AP9970GK Datasheet

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness

AP9970GK

Manufacturer Part Number
AP9970GK
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9970GK

Vds
60V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
50
Rds(on) / Max(m?) Vgs@4.5v
60
Qg (nc)
11.5
Qgs (nc)
2.5
Qgd (nc)
6
Id(a)
5.8
Pd(w)
2.8
Configuration
Single N
Package
SOT-223

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
AP9970GK
Quantity:
45 000
Company:
Part Number:
AP9970GK
Quantity:
195
Part Number:
AP9970GK-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
▼ Simple Drive Requirement
▼ Lower Gate Charge
▼ Fast Switching Characteristic
▼ RoHS Compliant
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
D
D
DM
low on-resistance and cost-effectiveness.
STG
J
DS
GS
D
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Resistance Junction-ambient
Parameter
Parameter
1
3
3
SOT-223
D
3
G
D
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
S
Max.
Pb Free Plating Product
-55 to 150
-55 to 150
Rating
BV
R
I
D
0.02
±20
5.8
4.6
2.8
G
60
30
DS(ON)
DSS
Value
45
AP9970GK
D
S
200725061-1/4
50mΩ
5.8A
Units
W/℃
℃/W
60V
Unit
W
V
V
A
A
A

Related parts for AP9970GK

AP9970GK Summary of contents

Page 1

... Operating Junction Temperature Range J Thermal Data Symbol Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET SOT-223 G Parameter Parameter 3 AP9970GK Pb Free Plating Product BV 60V DSS R 50mΩ DS(ON Rating Units 60 ±20 5.8 4 ...

Page 2

... AP9970GK Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... V Fig 2. Typical Output Characteristics 1 =10V G 1.4 1.0 0 Fig 4. Normalized On-Resistance v.s. Junction Temperature 60 40.0 30.0 1.2 0 Fig 6. On-Resistance vs. Drain Current AP9970GK o C 10V 7.0V 5.0V 4.5V V =3. Drain-to-Source Voltage ( 100 125 150 Junction Temperature ( =4. =10V GS ...

Page 4

... AP9970GK = =32V =40V DS V =48V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area =25 ...

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