AP9970GP-HF Advanced Power Electronics Corp., AP9970GP-HF Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP9970GP-HF

Manufacturer Part Number
AP9970GP-HF
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9970GP-HF

Vds
60V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
3.2
Qg (nc)
100
Qgs (nc)
14
Qgd (nc)
54
Id(a)
120
Pd(w)
375
Configuration
Single N
Package
TO-220
▼ Simple Drive Requirement
▼ Lower On-resistance
▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
I
P
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial
through-hole applications.
D
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
@T
C
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
=25℃
Advanced Power
Electronics Corp.
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Drain-Source Voltage
Gate-Source Voltage
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maixmum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
GS
GS
GS
@ 10V(Package Limited)
@ 10V(Silicon Limited)
@ 10V(Silicon Limited)
G
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Halogen-Free Product
G
-55 to 175
-55 to 175
D
Rating
BV
R
I
S
D
+20
240
170
120
960
375
60
DS(ON)
DSS
AP9970GP-HF
Value
0.4
62
TO-220(P)
3.2mΩ
200907272
240A
Units
Units
℃/W
℃/W
60V
W
V
V
A
A
A
A
1

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AP9970GP-HF Summary of contents

Page 1

... Maximum Thermal Resistance, Junction-case Rthj-a Maixmum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V(Silicon Limited 10V(Silicon Limited 10V(Package Limited Parameter AP9970GP-HF Halogen-Free Product BV 60V DSS R 3.2mΩ DS(ON) I 240A D G TO-220( Rating Units 60 ...

Page 2

... AP9970GP-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... V Fig 2. Typical Output Characteristics 2.4 I =60A D V =10V G 2.0 1.6 1.2 0.8 0.4 -50 10 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 1 0.8 0.4 0.0 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9970GP-HF 10V 175 C C 8.0V 7.0V 6.0V V =5. Drain-to-Source Voltage ( 100 150 200 Junction Temperature ( ...

Page 4

... AP9970GP- =30V =36V DS V =48V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 10000 1000 Operation in this area limited by R DS(ON) 100 = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...

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