AP9970GP-HF Advanced Power Electronics Corp., AP9970GP-HF Datasheet
AP9970GP-HF
Specifications of AP9970GP-HF
Related parts for AP9970GP-HF
AP9970GP-HF Summary of contents
Page 1
... Maximum Thermal Resistance, Junction-case Rthj-a Maixmum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V(Silicon Limited 10V(Silicon Limited 10V(Package Limited Parameter AP9970GP-HF Halogen-Free Product BV 60V DSS R 3.2mΩ DS(ON) I 240A D G TO-220( Rating Units 60 ...
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... AP9970GP-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...
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... V Fig 2. Typical Output Characteristics 2.4 I =60A D V =10V G 2.0 1.6 1.2 0.8 0.4 -50 10 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 1 0.8 0.4 0.0 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9970GP-HF 10V 175 C C 8.0V 7.0V 6.0V V =5. Drain-to-Source Voltage ( 100 150 200 Junction Temperature ( ...
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... AP9970GP- =30V =36V DS V =48V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 10000 1000 Operation in this area limited by R DS(ON) 100 = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...