AP9971AGD Advanced Power Electronics Corp., AP9971AGD Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness

AP9971AGD

Manufacturer Part Number
AP9971AGD
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9971AGD

Vds
60V
Vgs
±25V
Rds(on) / Max(m?) Vgs@10v
50
Rds(on) / Max(m?) Vgs@4.5v
60
Qg (nc)
17.5
Qgs (nc)
2
Qgd (nc)
6.3
Id(a)
5
Pd(w)
2
Configuration
Dual N
Package
PDIP-8
▼ Low On-resistance
▼ Fast Switching Speed
▼ PDIP-8 Package
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
STG
J
DS
GS
D
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
D1
PDIP-8
D1
3
3
, V
, V
D2
GS
GS
D2
@ 10V
@ 10V
S1
G1
S2
G2
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
3
RoHS-compliant Product
G1
-55 to 150
-55 to 150
Rating
BV
R
I
0.016
D
+25
3.2
60
20
DS(ON)
5
2
DSS
Value
62.5
D1
S1
AP9971AGD
G2
200809222
50mΩ
Units
W/℃
℃/W
60V
Unit
5A
W
V
V
A
A
A
D2
S2
1

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AP9971AGD Summary of contents

Page 1

... Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET PDIP Parameter 10V 10V GS 1 Parameter 3 AP9971AGD RoHS-compliant Product BV 60V DSS R 50mΩ DS(ON Rating Units 60 + 0.016 W/℃ -55 to 150 ...

Page 2

... AP9971AGD Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

Page 3

... Fig 2. Typical Output Characteristics 2 =10V G 1.6 1.2 0.8 0.4 10 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.6 2.2 C 1.8 1.4 1 1.3 1.5 -50 T Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9971AGD o 10V T =150 C A 7.0V 5.0V 4.5V V =4. Drain-to-Source Voltage ( 100 150 Junction Temperature ( ...

Page 4

... AP9971AGD =30V =36V DS V =48V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 ...

Page 5

... ADVANCED POWER ELECTRONICS CORP. Package Outline : PDIP Part Marking Information & Packing : PDIP-8 9971AGD YWWSSS 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions.    Part Number Package Code meet Rohs requirement for low voltage MOSFET only Date Code (YWWSSS) Y: ...

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