AP9971AGM Advanced Power Electronics Corp., AP9971AGM Datasheet

AP9971AGM

Manufacturer Part Number
AP9971AGM
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9971AGM

Vds
60V
Vgs
±25V
Rds(on) / Max(m?) Vgs@10v
50
Rds(on) / Max(m?) Vgs@4.5v
60
Qg (nc)
17.5
Qgs (nc)
2
Qgd (nc)
6.3
Id(a)
5
Pd(w)
2
Configuration
Dual N
Package
SO-8

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP9971AGM-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
▼ Low On-resistance
▼ Single Drive Requirement
▼ Surface Mount Package
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
The SO-8 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
STG
J
DS
GS
D
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Resistance Junction-ambient
Parameter
Parameter
D1
1
D1
SO-8
D2
3
3
, V
, V
D2
GS
GS
@ 10V
@ 10V
S1
G1
3
S2
G2
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
RoHS-compliant Product
Max.
G1
-55 to 150
-55 to 150
Rating
BV
R
I
0.016
D
±25
3.2
60
30
DS(ON)
5
2
DSS
Value
62.5
D1
S1
AP9971AGM
G2
200919071-1/4
50mΩ
Units
W/℃
℃/W
60V
Unit
5A
W
V
V
A
A
A
D2
S2

Related parts for AP9971AGM

AP9971AGM Summary of contents

Page 1

... Data and specifications subject to change without notice RoHS-compliant Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 Parameter 10V 10V GS 1 Parameter 3 AP9971AGM BV 60V DSS R 50mΩ DS(ON Rating Units 60 ± 0.016 W/℃ -55 to 150 -55 to 150 ...

Page 2

... AP9971AGM Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

Page 3

... V Fig 2. Typical Output Characteristics 2 =10V G 1.6 1.2 0.8 0.4 -50 10 Fig 4. Normalized On-Resistance 2 1.6 1.2 0.8 -50 1.3 1.5 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9971AGM o C 10V 7.0V 5.0V 4.5V V =4. Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 o T ,Junction Temperature ( ...

Page 4

... AP9971AGM =30V DS V =36V =48V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 ...

Page 5

... ADVANCED POWER ELECTRONICS CORP. Package Outline : SO Part Marking Information & Packing : SO-8 9971AGM YWWSSS 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. DETAIL A Part Number Package Code Date Code (YWWSSS) Y:Last Digit Of The Year WW: ...

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