AP9971GI Advanced Power Electronics Corp., AP9971GI Datasheet

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness

AP9971GI

Manufacturer Part Number
AP9971GI
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9971GI

Vds
60V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
36
Rds(on) / Max(m?) Vgs@4.5v
50
Qg (nc)
18
Qgs (nc)
6
Qgd (nc)
11
Id(a)
23
Pd(w)
31.3
Configuration
Single N
Package
TO-220CFM

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP9971GI-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
▼ Fast Switching Performance
▼ Single Drive Requirement
▼ Full Isolation Package
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
The Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-220CFM isolation package is universally preferred for all
commercial-industrial through hole applications.
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Parameter
Parameter
1
G
GS
GS
@ 10V
@ 10V
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Max.
Max.
RoHS-compliant Product
-55 to 150
-55 to 150
Rating
BV
R
I
G
D
31.3
0.25
±20
60
23
14
80
DS(ON)
D
DSS
S
Value
4.0
65
AP9971GI
TO-220CFM(I)
200712071-1/4
36mΩ
Units
W/℃
Units
℃/W
℃/W
60V
23A
W
V
V
A
A
A

Related parts for AP9971GI

AP9971GI Summary of contents

Page 1

... Thermal Data Symbol Rthj-c Thermal Resistance Junction-case Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP9971GI RoHS-compliant Product BV 60V DSS R 36mΩ DS(ON) I 23A TO-220CFM(I) S Rating Units 60 ±20 ...

Page 2

... AP9971GI Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... =10V G o =25 C 2.0 1.5 1.0 0.5 0.31 0.0 11 -50 Fig 4. Normalized On-Resistance 1.5 1 0.5 0 -50 1.2 1.4 Fig 6. Gate Threshold Voltage v.s. AP9971GI 10V o C 7.0V 5.0V 4.5V V =3. Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 o T ,Junction Temperature ( ...

Page 4

... AP9971GI 14 I =18A =30V =38V DS V =48V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 = Single Pulse 0.1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 ...

Page 5

... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-220CFM E E φ φ Part Marking Information & Packing : TO-220CFM 9971GI LOGO YWWSSS YWWSSS A A SYMBOLS φ 1.All Dimensions Are in Millimeters 2.Dimension Does Not Include Mold Protrusions. ...

Related keywords