AP9972AGP Advanced Power Electronics Corp., AP9972AGP Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness

AP9972AGP

Manufacturer Part Number
AP9972AGP
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9972AGP

Vds
60V
Vgs
±25V
Rds(on) / Max(m?) Vgs@10v
16
Qg (nc)
49
Qgs (nc)
13
Qgd (nc)
20
Id(a)
60
Pd(w)
89
Configuration
Single N
Package
TO-220

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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
AP9972AGP
Quantity:
45 000
▼ Low Gate Charge
▼ Single Drive Requirement
▼ Fast Switching Performance
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial
applications and suited for low voltage applications.
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
GS
GS
G
@ 10V
@ 10V
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
RoHS-compliant Product
G
-55 to 150
-55 to 150
D
Rating
BV
R
I
D
S
+25
240
0.7
60
60
38
89
DS(ON)
DSS
Value
1.4
62
AP9972AGP
TO-220(P)
200906195
16mΩ
Units
W/℃
Units
℃/W
℃/W
60V
60A
W
V
V
A
A
A
1

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AP9972AGP Summary of contents

Page 1

... Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP9972AGP RoHS-compliant Product BV 60V DSS R 16mΩ DS(ON) I 60A D G TO-220( Rating Units ...

Page 2

... AP9972AGP Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... I =30A D V =10V C G 1.6 1.2 0.8 0 -50 Fig 4. Normalized On-Resistance 1 1.1 0.9 0.7 0.5 -50 1 1.2 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9972AGP 10V o C 9.0V 8.0V 7.0V V =6. Drain-to-Source Voltage ( 100 150 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 Junction Temperature ( ...

Page 4

... AP9972AGP Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...

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