Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness

 

AP9972AGP

Manufacturer Part NumberAP9972AGP
DescriptionAdvanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
ManufacturerAdvanced Power Electronics Corp.
AP9972AGP datasheets

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Specifications of AP9972AGP

Vds60VVgs±25V
Rds(on) / Max(m?) Vgs@10v16Qg (nc)49
Qgs (nc)13Qgd (nc)20
Id(a)60Pd(w)89
ConfigurationSingle NPackageTO-220
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Advanced Power
Electronics Corp.
▼ Low Gate Charge
▼ Single Drive Requirement
▼ Fast Switching Performance
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial
applications and suited for low voltage applications.
Absolute Maximum Ratings
Symbol
V
Drain-Source Voltage
DS
V
Gate-Source Voltage
GS
Continuous Drain Current, V
I
@T
=25℃
D
C
Continuous Drain Current, V
I
@T
=100℃
D
C
I
Pulsed Drain Current
DM
P
@T
=25℃
Total Power Dissipation
D
C
Linear Derating Factor
T
Storage Temperature Range
STG
T
Operating Junction Temperature Range
J
Thermal Data
Symbol
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
G
S
Parameter
@ 10V
GS
@ 10V
GS
1
Parameter
AP9972AGP
RoHS-compliant Product
BV
60V
DSS
R
16mΩ
DS(ON)
I
60A
D
G
TO-220(P)
D
S
Rating
Units
60
+25
60
38
240
89
0.7
W/℃
-55 to 150
-55 to 150
Value
Units
1.4
℃/W
62
℃/W
200906195
V
V
A
A
A
W
℃
℃
1

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AP9972AGP Summary of contents

  • Page 1

    ... Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP9972AGP RoHS-compliant Product BV 60V DSS R 16mΩ DS(ON) I 60A D G TO-220( Rating Units ...

  • Page 2

    ... AP9972AGP Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

  • Page 3

    ... I =30A D V =10V C G 1.6 1.2 0.8 0 -50 Fig 4. Normalized On-Resistance 1 1.1 0.9 0.7 0.5 -50 1 1.2 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9972AGP 10V o C 9.0V 8.0V 7.0V V =6. Drain-to-Source Voltage ( 100 150 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 Junction Temperature ( ...

  • Page 4

    ... AP9972AGP Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...

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