AP9972AGP Advanced Power Electronics Corp., AP9972AGP Datasheet - Page 4

• Manufacturer Part Number: AP9972AGP
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP9972AGP

• Vds: 60V
• Vgs: ±25V
• Rds(on) / Max(m?) Vgs@10v: 16
• Qg (nc): 49
• Qgs (nc): 13
• Qgd (nc): 20
• Id(a): 60
• Pd(w): 89
• Configuration: Single N
• Package: TO-220

AP9972AGP
1000
100
14
12
10
10
80
60
40
20
1
8
6
4
2
0
0
0.1
Fig 9. Maximum Safe Operating Area
0
0
Fig 7. Gate Charge Characteristics
Fig 11. Transfer Characteristics
Single Pulse
V
T
I
DS
C
D
=25
= 40 A
=5V
V
V
o
2
GS
C
DS
1
Q
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
G
V
20
, Total Gate Charge (nC)
DS
V
T
4
= 32 V
DS
j
V
=25
= 40 V
DS
10
o
= 48 V
C
6
40
T
100ms
100us
10ms
j
1ms
DC
100
=150
8
o
C
1000
60
10
Fig 10. Effective Transient Thermal Impedance
10000
1000
0.01
100
0.1
0.00001
Fig 8. Typical Capacitance Characteristics
1
1
Fig 12. Gate Charge Waveform
10V
0.01
0.2
0.02
0.1
0.05
V
Single Pulse
Duty factor=0.5
G
0.0001
5
V
DS
Q
GS
, Drain-to-Source Voltage (V)
9
0.001
t , Pulse Width (s)
Q
Q
13
G
Charge
GD
0.01
17
P
DM
Duty factor = t/T
Peak T
0.1
21
j
= P
t
DM
T
x R
f=1.0MHz
thjc
1
+ T
25
C
Q
C
C
C
iss
rss
oss
10
29
4