AP9972GH-HF Advanced Power Electronics Corp., AP9972GH-HF Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness

AP9972GH-HF

Manufacturer Part Number
AP9972GH-HF
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9972GH-HF

Vds
60V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
18
Rds(on) / Max(m?) Vgs@4.5v
22
Qg (nc)
32
Qgs (nc)
8
Qgd (nc)
20
Id(a)
60
Pd(w)
89.3
Configuration
Single N
Package
TO-252

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP9972GH-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
▼ Simple Drive Requirement
▼ Lower Gate Charge
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Parameter
Parameter
1
GS
GS
G
@ 10V
@ 10V
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Halogen-Free Product
3
-55 to 150
-55 to 150
Rating
BV
R
I
D
89.3
+20
230
60
60
38
DS(ON)
G
DSS
AP9972GH-HF
Value
D
62.5
1.4
S
TO-252(H)
18mΩ
201010052
Units
Units
℃/W
℃/W
60V
60A
W
V
V
A
A
A
1

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AP9972GH-HF Summary of contents

Page 1

... Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP9972GH-HF Halogen-Free Product BV 60V DSS R 18mΩ DS(ON) I 60A TO-252(H) Rating ...

Page 2

... AP9972GH-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... Fig 2. Typical Output Characteristics 2.0 I =35A D 1.8 V =10V G 1.6 1.4 1.2 1.0 0.8 0.6 0.4 - Fig 4. Normalized On-Resistance 1.6 1 0.8 0.4 0.0 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. AP9972GH-HF 10V 150 C C 7.0V 5.0V 4.5V V =3. Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 Junction Temperature ( ...

Page 4

... AP9972GH- =30V DS V =38V DS V =48V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 Operation in this area limited by R 100 DS(ON = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...

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