AP9972GS-HF Advanced Power Electronics Corp., AP9972GS-HF Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness

AP9972GS-HF

Manufacturer Part Number
AP9972GS-HF
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9972GS-HF

Vds
60V
Vgs
±25V
Rds(on) / Max(m?) Vgs@10v
18
Rds(on) / Max(m?) Vgs@4.5v
22
Qg (nc)
32
Qgs (nc)
8
Qgd (nc)
20
Id(a)
60
Pd(w)
89
Configuration
Single N
Package
TO-263
▼ Low Gate Charge
▼ Single Drive Requirement
▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
P
E
I
T
T
Rthj-c
Rthj-a
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP9972GP) are
available for low-profile applications.
D
D
DM
AR
STG
J
DS
GS
D
AS
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
3
Parameter
Parameter
1
GS
GS
@ 10V
@ 10V
3
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
Halogen-Free Product
G
4
-55 to 150
-55 to 150
D
Rating
BV
R
I
AP9972GS/P-HF
D
+25
S
230
0.7
60
60
38
89
45
30
DS(ON)
G D
DSS
Value
1.4
40
62
S
TO-263(S)
TO-220(P)
201104186
18mΩ
Units
W/℃
Units
℃/W
℃/W
℃/W
60V
60A
W
mJ
V
V
A
A
A
A
1

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AP9972GS-HF Summary of contents

Page 1

... Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET G Parameter @ 10V GS @ 10V Parameter AP9972GS/P-HF Halogen-Free Product BV 60V D DSS R 18mΩ DS(ON) I 60A TO-263(S) G ...

Page 2

... AP9972GS/P-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient /ΔT ΔBV DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... A I =35A D o 1.4 = =10V G 1.2 1.0 0.8 0.6 -50 10 Fig 4. Normalized On-Resistance 1 0.7 0.2 -50 1 1.2 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9972GS/P-HF o 10V C 7.0V 5.0V 4.5V V =3. Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 Junction Temperature ( ...

Page 4

... AP9972GS/P- Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area 100 V =5V ...

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