AP9973GS Advanced Power Electronics Corp., AP9973GS Datasheet

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... Symbol Rthj-c Thermal Resistance Junction-case Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP9973GS/P RoHS-compliant Product BV 60V DSS R 80mΩ DS(ON) I 14A TO-263(S) G TO-220( Rating ...

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... AP9973GS/P Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

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... =10V C G 2.0 1.5 1.0 0.5 0.0 - Fig 4. Normalized On-Resistance 2.5 2 1 0.5 0 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9973GS/P 10V o C 7.0V 5.0V 4.5V V =3. Drain-to-Source Voltage ( 100 150 o , Junction Temperature ( C) v.s. Junction Temperature 2.01E+ 100 150 o T ...

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... AP9973GS =48V =38V DS V =30V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 = Single Pulse 0.1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) Fig 11 ...