AP9974AGP Advanced Power Electronics Corp., AP9974AGP Datasheet

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... Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP9974AGP RoHS-compliant Product BV 60V DSS R 12mΩ DS(ON) I 68A D G TO-220( Rating Units ...

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... AP9974AGP Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

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... Fig 2. Typical Output Characteristics 2.0 I =45A D V =10V G 1.6 1.2 0.8 0.4 10 -50 Fig 4. Normalized On-Resistance 1.4 1 =25 C 1.0 j 0.8 0.6 0.4 -50 1 1.2 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9974AGP o 10V C 7.0V 5.0V 4.5V V =3. Drain-to-Source Voltage ( 100 150 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 o ...

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... AP9974AGP Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...