AP9974GH-HF Advanced Power Electronics Corp., AP9974GH-HF Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness

AP9974GH-HF

Manufacturer Part Number
AP9974GH-HF
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9974GH-HF

Vds
60V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
10.5
Rds(on) / Max(m?) Vgs@4.5v
15
Qg (nc)
43
Qgs (nc)
8
Qgd (nc)
31
Id(a)
74
Pd(w)
104
Configuration
Single N
Package
TO-252
▼ Low On-resistance
▼ Single Drive Requirement
▼ Fast Switching Performance
▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP9974GJ) are
available for low-profile applications.
STG
J
DS
GS
D
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
GS
GS
@ 10V
@ 10V
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
Halogen-Free Product
3
-55 to 150
-55 to 150
Rating
BV
R
I
D
+20
104
300
AP9974GH/J-HF
0.8
G
60
74
48
DS(ON)
D
DSS
Value
G
S
62.5
110
1.2
D
S
TO-251(J)
TO-252(H)
10.5mΩ
200908202
Units
W/℃
Units
℃/W
℃/W
℃/W
60V
74A
W
V
V
A
A
A
1

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AP9974GH-HF Summary of contents

Page 1

... Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP9974GH/J-HF Halogen-Free Product BV 60V DSS R 10.5mΩ DS(ON) I 74A TO-252( ...

Page 2

... AP9974GH/J-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

Page 3

... Fig 2. Typical Output Characteristics 2 =10V G 1.6 1.2 0.8 0.4 10 -50 Fig 4. Normalized On-Resistance 1 0.8 0 1.2 -50 T Fig 6. Gate Threshold Voltage v.s. AP9974GH/J- .0V 5 Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 ...

Page 4

... AP9974GH/J- Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 Operation in this area 100 limited by R DS(ON = Single Pulse 0.1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...

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