AP9974GS Advanced Power Electronics Corp., AP9974GS Datasheet

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... Symbol Rthj-c Thermal Resistance Junction-case Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP9974GS/P Pb Free Plating Product BV 60V DSS R 12mΩ DS(ON) I 72A TO-263(S) G TO-220( Rating ...

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... AP9974GS/P Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

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... A I =45A =10V G 1.6 1.2 0.8 0.4 10 -50 Fig 4. Normalized On-Resistance 1.8 1 0.6 0.0 1 1.2 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9974GS/P 10V 7. 150 C C 5.0V 4.5V V =3. Drain-to-Source Voltage ( 100 150 Junction Temperature ( C) j v.s. Junction Temperature 0 50 ...

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... AP9974GS =48V =38V DS V =30V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area 125 V =5V ...