AP9976GM Advanced Power Electronics Corp., AP9976GM Datasheet

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... Operating Junction Temperature Range J Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter Parameter 3 AP9976GM RoHS-compliant Product BV 60V DSS R 20.5mΩ DS(ON Rating Units 60 +20 7 ...

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... AP9976GM Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

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... D V =10V G 2.0 1.6 1.2 0.8 0.4 10 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.4 1.2 1.0 o =25 C 0.8 0.6 0.4 0.2 1 1.2 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9976GM 10V Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 150 ...

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... AP9976GM =36V DS V =48V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Operation in this area limited by R DS( Single Pulse 0.01 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...