Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness

AP9976GP

Manufacturer Part NumberAP9976GP
DescriptionAdvanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
ManufacturerAdvanced Power Electronics Corp.
AP9976GP datasheet
 


Specifications of AP9976GP

Vds60VVgs±20V
Rds(on) / Max(m?) Vgs@10v21Rds(on) / Max(m?) Vgs@4.5v50
Qg (nc)30Qgs (nc)5.4
Qgd (nc)11Id(a)30
Pd(w)39ConfigurationSingle N
PackageTO-220  
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Advanced Power
Electronics Corp.
▼ Simple Drive Requirement
▼ Lower Gate Charge
▼ Fast Switching Characteristic
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial
through-hole applications.
Absolute Maximum Ratings
Symbol
V
Drain-Source Voltage
DS
V
Gate-Source Voltage
GS
Continuous Drain Current, V
I
@T
=25℃
D
C
Continuous Drain Current, V
I
@T
=100℃
D
C
I
Pulsed Drain Current
DM
P
@T
=25℃
Total Power Dissipation
D
C
T
Storage Temperature Range
STG
T
Operating Junction Temperature Range
J
Thermal Data
Symbol
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maixmum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
G
S
Parameter
@ 10V
GS
@ 10V
GS
1
Parameter
AP9976GP
RoHS-compliant Product
BV
60V
DSS
R
21mΩ
DS(ON)
I
30A
D
G
TO-220(P)
D
S
Rating
Units
60
±20
30
19
100
39
W
-55 to 150
-55 to 150
Value
Units
3.2
℃/W
62
℃/W
200806021
V
V
A
A
A
1

AP9976GP Summary of contents

  • Page 1

    ... Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maixmum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP9976GP RoHS-compliant Product BV 60V DSS R 21mΩ DS(ON) I 30A D G TO-220( Rating Units 60 ± ...

  • Page 2

    ... AP9976GP Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

  • Page 3

    ... V Fig 2. Typical Output Characteristics 2.4 I =18A D V =10V G 2.0 1.6 1.2 0.8 0.4 10 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 1 0.8 0.4 0.0 -50 1.2 1.4 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9976GP o C 10V 7.0V 6.0V 5.0V V =4. Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 150 o T ...

  • Page 4

    ... AP9976GP =36V DS V =48V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 0.1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% ...

  • Page 5

    ... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-220 E E1 φ Part Marking Information & Packing : TO-220 9976GP LOGO YWWSSS Part Number Package Code Date Code (YWWSSS) Millimeters SYMBOLS MIN NOM A 4.40 4.60 b 0.76 0. 8.60 8.80 c 0.36 0.43 E 9.80 10.10 L4 14.70 15.00 L5 6.20 6.40 D1 5.10 REF. c1 1.25 1.35 b1 1.17 1.32 L 13.25 13.75 e 2.54 REF. ...