Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness

AP9978AGP-HF

Manufacturer Part NumberAP9978AGP-HF
DescriptionAdvanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
ManufacturerAdvanced Power Electronics Corp.
AP9978AGP-HF datasheet
 

Specifications of AP9978AGP-HF

Vds60VVgs±20V
Rds(on) / Max(m?) Vgs@10v12Qg (nc)42
Qgs (nc)15Qgd (nc)19
Id(a)66Pd(w)92.6
ConfigurationSingle NPackageTO-220
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Advanced Power
Electronics Corp.
▼ Simple Drive Requirement
▼ Lower Gate Charge
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial
through-hole applications.
Absolute Maximum Ratings
Symbol
V
Drain-Source Voltage
DS
V
Gate-Source Voltage
GS
Continuous Drain Current, V
I
@T
=25℃
D
C
Continuous Drain Current, V
I
@T
=100℃
D
C
I
Pulsed Drain Current
DM
P
@T
=25℃
Total Power Dissipation
D
C
T
Storage Temperature Range
STG
T
Operating Junction Temperature Range
J
Thermal Data
Symbol
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maixmum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
G
S
Parameter
@ 10V
GS
@ 10V
GS
1
Parameter
AP9978AGP-HF
Halogen-Free Product
BV
60V
DSS
R
12mΩ
DS(ON)
I
66A
D
G
TO-220(P)
D
S
Rating
Units
60
V
+20
V
66
A
42
A
240
A
92.6
W
-55 to 150
-55 to 150
Value
Units
1.35
℃/W
62
℃/W
200908171
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AP9978AGP-HF Summary of contents

  • Page 1

    ... Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maixmum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP9978AGP-HF Halogen-Free Product BV 60V DSS R 12mΩ DS(ON) I 66A D G TO-220( Rating Units ...

  • Page 2

    ... AP9978AGP-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

  • Page 3

    ... Fig 2. Typical Output Characteristics 2.4 I =40A D V =10V G 2.0 1.6 1.2 0.8 0.4 -50 150 o C) Fig 4. Normalized On-Resistance 1.6 1 0.8 0.4 0.0 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. AP9978AGP-HF 10V 150 C C 9.0V 8.0V 7.0V V =6. Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 ...

  • Page 4

    ... AP9978AGP- =30V =36V DS V =48V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 Operation in this area limited by 100 R DS(ON = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...