AP9970AGP-HF Advanced Power Electronics Corp., AP9970AGP-HF Datasheet

AP9970AGP-HF

Manufacturer Part Number
AP9970AGP-HF
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9970AGP-HF

Vds
60V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
3
Qg (nc)
170
Qgs (nc)
25
Qgd (nc)
95
Id(a)
120
Pd(w)
333
Configuration
Single N
Package
TO-220
▼ Simple Drive Requirement
▼ Lower On-resistance
▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
I
P
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial
through-hole applications.
D
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
@T
C
C
C
Symbol
Symbol
C
=25℃
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Chip)
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maixmum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
GS
GS
G
@ 10V
@ 10V
3
3
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Halogen-Free Product
G
-55 to 175
-55 to 175
D
Rating
BV
R
I
S
D
+20
250
120
120
480
333
60
AP9970AGP-HF
DS(ON)
DSS
Value
0.45
62
TO-220(P)
201011032
3mΩ
250A
Units
Units
℃/W
℃/W
60V
W
V
V
A
A
A
A
1

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AP9970AGP-HF Summary of contents

Page 1

... Maximum Thermal Resistance, Junction-case Rthj-a Maixmum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter 3 @ 10V 10V GS 1 Parameter AP9970AGP-HF Halogen-Free Product BV 60V DSS R 3mΩ DS(ON) I 250A D G TO-220( Rating Units 60 ...

Page 2

... AP9970AGP-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... Fig 2. Typical Output Characteristics 2.4 I =60A D V =10V G 2.0 1.6 1.2 0.8 0.4 150 200 - Fig 4. Normalized On-Resistance 1.6 I =1mA D 1 0.8 0.4 0.0 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. AP9970AGP-HF 10V 175 C C 8.0V 7.0V 6.0V V =5. Drain-to-Source Voltage ( 100 150 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 150 ...

Page 4

... AP9970AGP- =30V DS V =36V =60V 120 Q , Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 Operation in this area limited by R DS(ON) 100 = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...

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