AP9970GW-HF Advanced Power Electronics Corp., AP9970GW-HF Datasheet
AP9970GW-HF
Specifications of AP9970GW-HF
Related parts for AP9970GW-HF
AP9970GW-HF Summary of contents
Page 1
... Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maixmum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter 3 @ 10V 10V GS 1 Parameter AP9970GW-HF Halogen-Free Product BV 60V DSS R 3.2mΩ DS(ON) I 240A D G TO- Rating Units 60 V +20 ...
Page 2
... AP9970GW-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...
Page 3
... D V =10V G 2.2 1.8 1.4 1.0 0.6 0.2 - Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 I =1mA D 1 0.8 0.4 0.0 1.2 1.4 -50 0 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9970GW- 175 C 10V C 8.0V 7.0V 6.0V V =5. Drain-to-Source Voltage ( 100 150 200 Junction Temperature ( 100 150 200 ...
Page 4
... AP9970GW- =30V =36V DS V =48V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 Operation in this area limited by R DS(ON) 100 = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...