AP60T06GP-HF

Manufacturer Part NumberAP60T06GP-HF
ManufacturerAdvanced Power Electronics Corp.
AP60T06GP-HF datasheets

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Specifications of AP60T06GP-HF

Vds55VVgs±20V
Rds(on) / Max(m?) Vgs@10v12Qg (nc)28
Qgs (nc)6.5Qgd (nc)13
Id(a)46Pd(w)44.6
ConfigurationSingle NPackageTO-220
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Advanced Power
Electronics Corp.
▼ Simple Drive Requirement
▼ Lower On-resistance
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial
through-hole applications.
Absolute Maximum Ratings
Symbol
V
Drain-Source Voltage
DS
V
Gate-Source Voltage
GS
Continuous Drain Current, V
I
@T
=25℃
D
C
Continuous Drain Current, V
I
@T
=100℃
D
C
I
Pulsed Drain Current
DM
P
@T
=25℃
Total Power Dissipation
D
C
P
@T
=25℃
Total Power Dissipation
D
A
T
Storage Temperature Range
STG
T
Operating Junction Temperature Range
J
Thermal Data
Symbol
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maixmum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
G
S
Parameter
@ 10V
GS
@ 10V
GS
1
Parameter
AP60T06GP-HF
Halogen-Free Product
BV
55V
DSS
R
12mΩ
DS(ON)
I
46A
D
G
TO-220(P)
D
S
Rating
Units
55
V
+20
V
46
A
29
A
160
A
44.6
W
2
W
-55 to 150
℃
-55 to 150
℃
Value
Units
2.8
℃/W
62
℃/W
201101181
1

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  AP60T03GH/J N-CHANNEL ENHANCEMENT MODE POWER MOSFET A-POWER [Advanced Power Electronics Corp.]

AP60T06GP-HF Summary of contents

  • Page 1

    ... Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maixmum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP60T06GP-HF Halogen-Free Product BV 55V DSS R 12mΩ DS(ON) I 46A D G TO-220( Rating Units ...

  • Page 2

    ... AP60T06GP-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

  • Page 3

    ... Fig 2. Typical Output Characteristics 2.4 I =30A D V =10V G 2.0 1.6 1.2 0.8 0.4 -50 150 o C) Fig 4. Normalized On-Resistance 2.0 I =1mA D 1.6 1 0.8 0.4 0.0 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. AP60T06GP- 150 C 10V C 9.0V 8.0V 7.0V V =6. Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 Junction Temperature ( ...

  • Page 4

    ... AP60T06GP- =20A D V =30V =36V DS V =48V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 Operation in this area limited by R DS(ON = Single Pulse 0.1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...

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