AP2RA04GMT-HF

Manufacturer Part NumberAP2RA04GMT-HF
ManufacturerAdvanced Power Electronics Corp.
AP2RA04GMT-HF datasheets

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Specifications of AP2RA04GMT-HF

Vds40VVgs±20V
Rds(on) / Max(m?) Vgs@10v2.9Rds(on) / Max(m?) Vgs@4.5v4.6
Qg (nc)26Qgs (nc)6
Qgd (nc)14Id(a)130
Pd(w)83.3ConfigurationSingle N
PackagePMPAK 5X6  
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300
o
T
=25
C
C
250
200
150
100
50
0
0.0
1.0
2.0
3.0
V
, Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
4
I
=20A
D
o
T
=25
C
C
3.6
3.2
2.8
2.4
2
2
4
6
V
, Gate-to-Source Voltage (V)
GS
Fig 3. On-Resistance v.s. Gate Voltage
30
20
o
T
=150
C
T
j
10
0
0
0.2
0.4
0.6
0.8
V
, Source-to-Drain Voltage (V)
SD
Fig 5. Forward Characteristic of
Reverse Diode
120
10V
7.0V
6.0V
100
5.0V
80
V
= 4.0 V
G
60
40
20
0
4.0
0.0
Fig 2. Typical Output Characteristics
2.0
I
=20A
D
V
=10V
G
1.6
1.2
0.8
0.4
-50
8
10
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
1.2
o
=25
C
j
0.8
0.4
0.0
1
1.2
-50
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
AP2RA04GMT-HF
o
T
=150
C
10V
C
7.0V
6.0V
5.0V
V
=4.0V
G
1.0
2.0
3.0
V
, Drain-to-Source Voltage (V)
DS
0
50
100
o
T
, Junction Temperature (
C)
j
0
50
100
o
T
, Junction Temperature (
C)
j
4.0
150
150
3