AP9971GS-HF Advanced Power Electronics Corp., AP9971GS-HF Datasheet

AP9971GS-HF

Manufacturer Part Number
AP9971GS-HF
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9971GS-HF

Vds
60V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
36
Rds(on) / Max(m?) Vgs@4.5v
50
Qg (nc)
18
Qgs (nc)
6
Qgd (nc)
11
Id(a)
25
Pd(w)
39
Configuration
Single N
Package
TO-263
▼ Low On-resistance
▼ Single Drive Requirement
▼ Surface Mount Package
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP9971GP) are
available for low-profile applications.
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
G
GS
GS
@ 10V
@ 10V
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
RoHS-compliant Product
G
3
D
-55 to 150
-55 to 150
Rating
BV
R
I
S
D
0.31
+20
AP9971GS/P-HF
60
25
16
80
39
DS(ON)
G D
DSS
Value
3.2
62
40
S
TO-263(S)
TO-220(P)
36mΩ
201105254
Units
W/℃
Units
℃/W
℃/W
℃/W
60V
25A
W
V
V
A
A
A
1

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AP9971GS-HF Summary of contents

Page 1

... Maximum Thermal Resistance, Junction-ambient (PCB mount) Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP9971GS/P-HF RoHS-compliant Product BV 60V DSS R 36mΩ DS(ON) I 25A TO-263( TO-220(P) ...

Page 2

... AP9971GS/P-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... I =18A =10V G o 2.0 =25 C 1.5 1.0 0.5 0.31 0.0 11 -50 Fig 4. Normalized On-Resistance 2 1.8 1.4 1 0.6 -50 1.2 1.4 Fig 6. Gate Threshold Voltage v.s. AP9971GS/P-HF 10V o C 7.0V 5.0V 4.5V V =3. Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 o T ,Junction Temperature ( ...

Page 4

... AP9971GS/P- =18A =30V DS V =38V =48V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 = Single Pulse 0.1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) Fig 11 ...

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