AP6679GP-A-HF

Manufacturer Part NumberAP6679GP-A-HF
ManufacturerAdvanced Power Electronics Corp.
AP6679GP-A-HF datasheet
 


Specifications of AP6679GP-A-HF

Vds-40VVgs±25V
Rds(on) / Max(m?) Vgs@10v13.5Rds(on) / Max(m?) Vgs@4.5v20
Qg (nc)43Qgs (nc)7
Qgd (nc)26Id(a)-65
Pd(w)89ConfigurationSingle P
PackageTO-220  
1
Page 1
2
Page 2
3
Page 3
4
Page 4
Page 1/4

Download datasheet (63Kb)Embed
Next
Advanced Power
Electronics Corp.
▼ Lower On-resistance
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP6679GP-A)
are available for low-profile applications.
Absolute Maximum Ratings
Symbol
V
Drain-Source Voltage
DS
V
Gate-Source Voltage
GS
Continuous Drain Current, V
I
@T
=25℃
D
C
Continuous Drain Current, V
I
@T
=100℃
D
C
I
Pulsed Drain Current
DM
P
@T
=25℃
Total Power Dissipation
D
C
Linear Derating Factor
T
Storage Temperature Range
STG
T
Operating Junction Temperature Range
J
Thermal Data
Symbol
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
G
S
Parameter
@ 10V
GS
@ 10V
GS
1
Parameter
AP6679GS/P-A-HF
Halogen-Free Product
BV
-40V
DSS
R
13.5mΩ
DS(ON)
I
-65A
D
G D
TO-263(S)
S
G
TO-220(P)
D
S
Rating
Units
-40
V
+25
V
-65
A
-41
A
-260
A
89
W
0.71
W/℃
-55 to 150
-55 to 150
Value
Unit
℃/W
1.4
℃/W
62
201011182
1

AP6679GP-A-HF Summary of contents

  • Page 1

    ... The TO-263 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP6679GP-A) are available for low-profile applications. Absolute Maximum Ratings Symbol ...

  • Page 2

    AP6679GS/P-A-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV /ΔT Breakdown Voltage Temperature Coefficient DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current ...

  • Page 3

    T = 160 120 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Gate-to-Source ...

  • Page 4

    AP6679GS/P-A- -16A -32V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = ...