AP9971AGM-HF Advanced Power Electronics Corp., AP9971AGM-HF Datasheet

AP9971AGM-HF

Manufacturer Part Number
AP9971AGM-HF
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9971AGM-HF

Vds
60V
Vgs
±25V
Rds(on) / Max(m?) Vgs@10v
50
Rds(on) / Max(m?) Vgs@4.5v
60
Qg (nc)
17.5
Qgs (nc)
2
Qgd (nc)
6.3
Id(a)
5
Pd(w)
2
Configuration
Dual N
Package
SO-8

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP9971AGM-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
▼ Low On-resistance
▼ Single Drive Requirement
▼ Surface Mount Package
▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
ultra low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
STG
J
DS
GS
D
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
3
3
, V
, V
GS
GS
@ 10V
@ 10V
D1
SO-8
D1
D2
D2
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
3
S1
G1
G1
Halogen-Free Product
S2
G2
-55 to 150
-55 to 150
Rating
BV
R
I
0.016
D
AP9971AGM-HF
+25
3.2
60
30
DS(ON)
5
2
DSS
Value
62.5
D1
S1
G2
201112293
50mΩ
Units
W/℃
℃/W
60V
Unit
5A
W
V
V
A
A
A
D2
S2
1

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AP9971AGM-HF Summary of contents

Page 1

... Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 Parameter 10V 10V GS 1 Parameter 3 AP9971AGM-HF Halogen-Free Product BV DSS R 50mΩ DS(ON Rating 60 + ...

Page 2

... AP9971AGM-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

Page 3

... Fig 2. Typical Output Characteristics 2 =10V G 1.6 1.2 0.8 0.4 -50 10 Fig 4. Normalized On-Resistance 2 1.6 1.2 0.8 -50 1.3 1.5 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9971AGM- 10V 7.0V 5.0V 4.5V V =4. Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 o T ,Junction Temperature ( ...

Page 4

... AP9971AGM- = =30V DS V =36V DS V =48V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 ...

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