AP9972AGR-HF Advanced Power Electronics Corp., AP9972AGR-HF Datasheet

AP9972AGR-HF

Manufacturer Part Number
AP9972AGR-HF
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9972AGR-HF

Vds
60V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
16
Qg (nc)
50
Qgs (nc)
13
Qgd (nc)
20
Id(a)
60
Pd(w)
89
Configuration
Single N
Package
TO-262
▼ Low Gate Charge
▼ Single Drive Requirement
▼ Fast Switching Performance
▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
P
P
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The TO-262 package is widely preferred for commercial-industrial
through-hole applications and suited for low voltage applications such as
DC/DC converters.
D
D
DM
DS
GS
D
D
STG
J
@T
@T
@T
@T
C
C
Symbol
Symbol
C
A
=25℃
=100℃
=25℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
GS
GS
@ 10V
@ 10V
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
Halogen-Free Product
-55 to 150
-55 to 150
Rating
BV
R
I
G
D
+20
240
AP9972AGR-HF
60
60
38
89
DS(ON)
2
D
DSS
S
Value
1.4
62
TO-262(R)
201109151
16mΩ
Units
Units
℃/W
℃/W
60V
60A
W
W
V
V
A
A
A
1

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AP9972AGR-HF Summary of contents

Page 1

... Thermal Data Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET G Parameter @ 10V GS @ 10V GS 1 Parameter AP9972AGR-HF Halogen-Free Product BV 60V D DSS R 16mΩ DS(ON) I 60A TO-262(R) S ...

Page 2

... AP9972AGR-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... I =30A D V =10V C G 1.6 1.2 0.8 0 -50 Fig 4. Normalized On-Resistance 1 1.1 0.9 0.7 0.5 -50 1 1.2 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9972AGR-HF 10V o C 9.0V 8.0V 7.0V V =6. Drain-to-Source Voltage ( 100 150 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 Junction Temperature ( ...

Page 4

... AP9972AGR- Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 Operation in this area limited by 100 R DS(ON = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...

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