AP9974GS-HF Advanced Power Electronics Corp., AP9974GS-HF Datasheet

AP9974GS-HF

Manufacturer Part Number
AP9974GS-HF
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9974GS-HF

Vds
60V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
12
Rds(on) / Max(m?) Vgs@4.5v
15
Qg (nc)
43
Qgs (nc)
8
Qgd (nc)
31
Id(a)
72
Pd(w)
104
Configuration
Single N
Package
TO-263
▼ Low Gate Charge
▼ Single Drive Requirement
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
P
E
T
T
Rthj-c
Rthj-a
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The TO-263 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters. The through-hole version (AP9974GP) are
available for low-profile applications.
D
D
DM
STG
J
DS
GS
D
AS
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
GS
GS
@ 10V
@ 10V
3
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
Halogen-Free Product
G
4
D
-55 to 150
-55 to 150
Rating
BV
R
I
S
AP9974GS/P-HF
D
+20
300
104
0.8
G
60
72
46
45
DS(ON)
DSS
Value
D S
1.2
40
62
TO-263(S)
TO-220(P)
201109272
12mΩ
Units
W/℃
Units
℃/W
℃/W
℃/W
60V
72A
W
mJ
V
V
A
A
A
1

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AP9974GS-HF Summary of contents

Page 1

... Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET G Parameter @ 10V GS @ 10V Parameter AP9974GS/P-HF Halogen-Free Product BV 60V D DSS R 12mΩ DS(ON) I 72A TO-263(S) G ...

Page 2

... AP9974GS/P-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient /ΔT ΔBV DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge ...

Page 3

... Fig 2. Typical Output Characteristics 2.0 I =45A D V =10V G 1.6 1.2 0.8 0.4 10 -50 Fig 4. Normalized On-Resistance 1.8 1 0.6 0.0 -50 1 1.2 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9974GS/P-HF 10V 7. 150 C C 5.0V 4.5V V =3. Drain-to-Source Voltage ( 100 150 Junction Temperature ( C) j v.s. Junction Temperature ...

Page 4

... AP9974GS/P- Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area 125 ...

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