AP9963AGS-HF Advanced Power Electronics Corp., AP9963AGS-HF Datasheet

AP9963AGS-HF

Manufacturer Part Number
AP9963AGS-HF
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9963AGS-HF

Vds
40V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
4.2
Qg (nc)
58
Qgs (nc)
12
Qgd (nc)
26
Id(a)
150
Pd(w)
156
Configuration
Single N
Package
TO-263
▼ Simple Drive Requirement
▼ Low On-resistance
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
I
P
P
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, ruggedized device design, low on-resistance
and cost-effectiveness.
The TO-263 package is widely preferred for commercial-industrial surface
mount applications and suited for low voltage applications such as DC/DC
converters.
D
D
D
DM
STG
J
DS
GS
D
D
@T
@T
@T
@T
@T
C
C
C
Symbol
Symbol
C
A
=25℃
=25℃
=100℃
=25℃
=25℃
Advanced Power
Electronics Corp.
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Chip)
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Parameter
Parameter
1
4
GS
GS
G
@ 10V
@ 10V
3
3
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Halogen-Free Product
4
-55 to 150
-55 to 150
Rating
BV
R
I
D
3.13
+20
150
320
156
40
80
80
AP9963AGS-HF
DS(ON)
G D
DSS
Value
0.8
40
S
TO-263(S)
4.2mΩ
201112071
150A
Units
Units
℃/W
℃/W
40V
W
W
V
V
A
A
A
A
1

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AP9963AGS-HF Summary of contents

Page 1

... Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter 3 @ 10V 10V Parameter AP9963AGS-HF Halogen-Free Product BV 40V DSS R 4.2mΩ DS(ON) I 150A TO-263(S) Rating Units 40 V +20 ...

Page 2

... AP9963AGS-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... Fig 2. Typical Output Characteristics 2.0 I =40A D V =10V G 1.4 0.8 0.2 150 - Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 I =1mA 0.8 0.4 0.0 1 1.2 -50 Fig 6. Gate Threshold Voltage v.s. AP9963AGS-HF 10V o T =150 C C 8.0V 7.0V 6.0V V =5.0V G 4.0 8.0 12.0 16 Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 150 o ...

Page 4

... AP9963AGS- =40A D V =32V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 Operation in this area limited by R DS(ON) 100 = Single Pulse 1 0 ,Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area 160 ...

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