AP9972AGP-HF Advanced Power Electronics Corp., AP9972AGP-HF Datasheet

AP9972AGP-HF

Manufacturer Part Number
AP9972AGP-HF
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9972AGP-HF

Vds
60V
Vgs
±25V
Rds(on) / Max(m?) Vgs@10v
16
Qg (nc)
49
Qgs (nc)
13
Qgd (nc)
20
Id(a)
60
Pd(w)
89
Configuration
single N
Package
TO-220
▼ Low Gate Charge
▼ Single Drive Requirement
▼ Fast Switching Performance
▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial
applications and suited for low voltage applications.
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
GS
GS
G
@ 10V
@ 10V
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Halogen-Free Product
G
-55 to 150
-55 to 150
D
Rating
BV
R
I
D
S
+25
240
0.7
AP9972AGP-HF
60
60
38
89
DS(ON)
DSS
Value
1.4
62
TO-220(P)
201203075
16mΩ
Units
W/℃
Units
℃/W
℃/W
60V
60A
W
V
V
A
A
A
1

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AP9972AGP-HF Summary of contents

Page 1

... Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP9972AGP-HF Halogen-Free Product BV 60V DSS R 16mΩ DS(ON) I 60A D G TO-220( Rating Units ...

Page 2

... AP9972AGP-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient /ΔT ΔBV DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... I =30A D V =10V C G 1.6 1.2 0.8 0 -50 Fig 4. Normalized On-Resistance 1 1.1 0.9 0.7 0.5 -50 1 1.2 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9972AGP-HF 10V o C 9.0V 8.0V 7.0V V =6. Drain-to-Source Voltage ( 100 150 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 Junction Temperature ( ...

Page 4

... AP9972AGP- Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...

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