AP03N70I-HF Advanced Power Electronics Corp., AP03N70I-HF Datasheet
AP03N70I-HF
Specifications of AP03N70I-HF
Related parts for AP03N70I-HF
AP03N70I-HF Summary of contents
Page 1
... Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V Parameter AP03N70I-HF Halogen-Free Product BV 600V DSS R 3.6Ω DS(ON TO-220CFM(I) Rating Units 600 V ...
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... AP03N70I-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...
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... Fig 2. Typical Output Characteristics 2.8 I =1.6A D 2.4 V =10V G 2.0 1.6 1.2 0.8 0.4 0.0 150 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 2 1 1.2 0.8 0.4 0 1.1 1.3 -50 T Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP03N70I- 10V 5.0V 4.5V 4.0V V =3. Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 150 o , Junction Temperature ( C) ...
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... AP03N70I- = =480V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 10 Operation in this area limited by R DS(ON = Single Pulse 100 V , Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 ...