AP18P10GH

Manufacturer Part NumberAP18P10GH
ManufacturerAdvanced Power Electronics Corp.
AP18P10GH datasheets

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Specifications of AP18P10GH

Vds-100VVgs±20V
Rds(on) / Max(m?) Vgs@10v180Rds(on) / Max(m?) Vgs@4.5v210
Qg (nc)16Qgs (nc)4.4
Qgd (nc)8.7Id(a)-12
Pd(w)35.7ConfigurationSingle P
PackageTO-252  
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Advanced Power
Electronics Corp.
▼ Lower Gate Charge
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP18P10GJ) is
available for low-profile applications.
Absolute Maximum Ratings
Symbol
V
Drain-Source Voltage
DS
V
Gate-Source Voltage
GS
Continuous Drain Current, V
I
@T
=25℃
D
C
Continuous Drain Current, V
I
@T
=100℃
D
C
I
Pulsed Drain Current
DM
P
@T
=25℃
Total Power Dissipation
D
C
T
Storage Temperature Range
STG
T
Operating Junction Temperature Range
J
Thermal Data
Symbol
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
G
S
Parameter
@ 10V
GS
@ 10V
GS
1
Parameter
AP18P10GH/J
RoHS-compliant Product
BV
-100V
DSS
R
180mΩ
DS(ON)
I
-12A
D
G
D
S
TO-252(H)
G
D
S
TO-251(J)
Rating
Units
-100
±20
-12
-10
-48
35.7
-55 to 150
-55 to 150
Value
Units
3.5
℃/W
110
℃/W
200810162
V
V
A
A
A
W
℃
℃
1

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AP18P10GH Summary of contents

  • Page 1

    ... Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP18P10GH/J RoHS-compliant Product BV -100V DSS R 180mΩ DS(ON) I -12A TO-252( ...

  • Page 2

    ... AP18P10GH/J Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

  • Page 3

    ... Fig 2. Typical Output Characteristics 2 -10V G 1.6 1.2 0.8 0.4 10 -50 Fig 4. Normalized On-Resistance 2.0 1 1.0 0.5 0.0 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. AP18P10GH/J -10V o C -7.0V -5.0V -4. -3. Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 Junction Temperature ( ...

  • Page 4

    ... AP18P10GH Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 = Single Pulse 0 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area - = 12.5 10 7 ...

  • Page 5

    ... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-252 (0.1mm A3 Part Marking Information & Packing : TO-252 18P10GH YWWSSS 0.127~0.381 C Part Number LOGO Date Code (YWWSSS) Millimeters SYMBOLS MIN NOM MAX A2 1.80 2.30 2.80 A3 0.40 0.50 0.60 B1 0.40 0.70 1.00 D 6.00 6.50 7.00 D1 4.80 5.35 5.90 E3 3.50 4.00 4.50 F 2.20 2.63 3.05 F1 0.5 0.85 E1 5.10 5.70 6.30 E2 0.50 1.10 1. ...

  • Page 6

    ... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-251 Part Marking Information & Packing : TO-251 18P10GJ LOGO YWWSSS Part Number Date Code (YWWSSS) Y ：Last Digit Of The Year WW ：Week SSS ：Sequence Millimeters SYMBOLS MIN NOM MAX A 2.20 2.30 2.40 A1 0.90 1.20 1.50 B1 0.50 0.69 0.88 B2 ...

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