AP18T10AGH-HF Advanced Power Electronics Corp., AP18T10AGH-HF Datasheet
AP18T10AGH-HF
Specifications of AP18T10AGH-HF
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AP18T10AGH-HF Summary of contents
Page 1
... Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET G Parameter @ 10V GS @ 10V Parameter AP18T10AGH/J-HF Halogen-Free Product BV 100V D DSS R 160mΩ DS(ON TO-252(H) S ...
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... AP18T10AGH/J-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...
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... V DS Fig 2. Typical Output Characteristics 2 =10V G 2.0 1.6 1.2 0.8 0.4 10 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 1 0.8 0.4 0.0 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP18T10AGH/J-HF o 10V C 8.0V 7. Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 150 Junction Temperature ( ...
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... AP18T10AGH/J- Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Operation in this area limited by R DS(ON = Single Pulse 0.1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% ...