AP30T10GP-HF Advanced Power Electronics Corp., AP30T10GP-HF Datasheet
AP30T10GP-HF
Specifications of AP30T10GP-HF
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AP30T10GP-HF Summary of contents
Page 1
... Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP30T10GP-HF Halogen-Free Product BV 100V DSS R 55mΩ DS(ON) I 19A D G TO-220( Rating Units ...
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... AP30T10GP-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...
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... Fig 2. Typical Output Characteristics 2.4 I =12A D V =10V G 2.0 1.6 1.2 0.8 0.4 -50 10 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 I =1mA D 1.2 0 0.4 0 -50 1.2 1.4 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP30T10GP-HF 10V o C 7.0V 6. Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 150 o T ,Junction Temperature ( C) ...
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... AP30T10GP- Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Operation in this area limited by R DS(ON = Single Pulse 0.1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...