AP94T07GP-HF Advanced Power Electronics Corp., AP94T07GP-HF Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP94T07GP-HF

Manufacturer Part Number
AP94T07GP-HF
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP94T07GP-HF

Vds
75V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
8
Qg (nc)
58
Qgs (nc)
14
Qgd (nc)
29
Id(a)
80
Pd(w)
125
Configuration
Single N
Package
TO-220
▼ Simple Drive Requirement
▼ Lower On-resistance
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
P
E
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
The Advanced Power MOSFETs from APEC provide the
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial
power applications and suited for low voltage applications such as
DC/DC converters.
D
D
DM
STG
J
DS
GS
D
AS
@T
@T
@T
c
c
Symbol
Symbol
=25℃
=100℃
c
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Single Pulse Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
GS
GS
G
@ 10V
@ 10V
4
3
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Halogen-Free Product
G
D
-55 to 175
-55 to 175
Rating
BV
R
I
S
D
+20
300
125
75
80
58
45
DS(ON)
AP94T07GP-HF
DSS
Value
1.2
62
TO-220(P)
201010192
8mΩ
Units
Units
℃/W
℃/W
75V
80A
W
mJ
V
V
A
A
A
1

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AP94T07GP-HF Summary of contents

Page 1

... Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter 3 @ 10V GS @ 10V Parameter AP94T07GP-HF Halogen-Free Product BV 75V DSS R 8mΩ DS(ON) I 80A D G TO-220( Rating Units 75 V ...

Page 2

... AP94T07GP-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... D V =10V G 2.4 2.0 1.6 1.2 0.8 0.4 150 200 - Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 1 0.8 0.4 0.0 1 1.2 -50 0 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP94T07GP-HF 10V o T =175 C C 9.0V 8.0V 7.0V V =6.0V G 4.0 6.0 8.0 10.0 12.0 , Drain-to-Source Voltage ( 100 150 200 Junction Temperature ( 100 150 200 o ...

Page 4

... AP94T07GP- =40A =40V DS V =45V =60V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 Operation in this area limited by R DS(ON) 100 = Single Pulse 1 0 ,Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...

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