AP96T07GS-HF

Manufacturer Part NumberAP96T07GS-HF
ManufacturerAdvanced Power Electronics Corp.
AP96T07GS-HF datasheets

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Specifications of AP96T07GS-HF

Vds75VVgs±20V
Rds(on) / Max(m?) Vgs@10v4.5Qg (nc)92
Qgs (nc)16Qgd (nc)48
Id(a)80Pd(w)300
ConfigurationSingle NPackageTO-263
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Advanced Power
Electronics Corp.
▼ Simple Drive Requirement
▼ Lower On-resistance
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is widely preferred for commercial-industrial
surface mount applications and suited for switching power
applications.
Absolute Maximum Ratings
Symbol
V
Drain-Source Voltage
DS
V
Gate-Source Voltage
GS
I
@T
=25℃
Continuous Drain Current (Chip)
D
C
Continuous Drain Current, V
I
@T
=25℃
D
C
Continuous Drain Current, V
I
@T
=100℃
D
C
I
Pulsed Drain Current
DM
P
@T
=25℃
Total Power Dissipation
D
C
T
Storage Temperature Range
STG
T
Operating Junction Temperature Range
J
Thermal Data
Symbol
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Data and specifications subject to change without notice
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
G
S
Parameter
3
@ 10V
GS
3
@ 10V
GS
1
Parameter
AP96T07GS-HF
Halogen-Free Product
BV
75V
DSS
R
4.5mΩ
DS(ON)
I
120A
D
G D
TO-263(S)
S
Rating
Units
75
V
+20
V
175
A
120
A
120
A
480
A
300
W
-55 to 175
℃
-55 to 175
℃
Value
Units
0.5
℃/W
4
40
℃/W
200907092
1

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AP96T07GS-HF Summary of contents

  • Page 1

    ... Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter 3 @ 10V 10V GS 1 Parameter AP96T07GS-HF Halogen-Free Product BV 75V DSS R 4.5mΩ DS(ON) I 120A TO-263(S) S Rating Units 75 V ...

  • Page 2

    ... AP96T07GS-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

  • Page 3

    ... Fig 2. Typical Output Characteristics 2.4 I =40A D V =10V G 2.0 1.6 1.2 0.8 0.4 - Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 1 0.8 0.4 0.0 1 1.2 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP96T07GS-HF 10V 175 C C 8.0V 7.0V 6.0V V =5. Drain-to-Source Voltage ( 100 150 200 Junction Temperature ( ...

  • Page 4

    ... AP96T07GS- =40V =45V DS V =60V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 Operation in this area limited by R DS(ON) 100 = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...

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