AP75N07AGP Advanced Power Electronics Corp., AP75N07AGP Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP75N07AGP

Manufacturer Part Number
AP75N07AGP
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP75N07AGP

Vds
75V
Vgs
±30V
Rds(on) / Max(m?) Vgs@10v
11
Qg (nc)
100
Qgs (nc)
13
Qgd (nc)
47
Id(a)
80
Pd(w)
300
Configuration
Single N
Package
TO-220

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Quantity
Price
Company:
Part Number:
AP75N07AGP
Quantity:
45 000
▼ Low Gate Charge
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
V
V
I
I
I
P
E
T
T
Rthj-c
Rthj-a
Data & specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial
through-hole applications and suited for low voltage applications such
as DC/DC converters.
STG
J
DS
GS
D
AS
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Single Pulse Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
1
Parameter
G
GS
GS
@ 10V
@ 10V
3
4
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
RoHS-compliant Product
-55 to 175
-55 to 175
G
Rating
BV
R
I
D
+30
320
300
450
75
80
70
DS(ON)
D
DSS
S
Value
AP75N07AGP
0.5
62
TO-220(P)
11mΩ
200902093
Units
Units
℃/W
℃/W
75V
80A
mJ
W
V
V
A
A
A
1

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AP75N07AGP Summary of contents

Page 1

... Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice RoHS-compliant Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter 4 @ 10V GS @ 10V Parameter AP75N07AGP BV 75V DSS R 11mΩ DS(ON) I 80A D G TO-220( Rating Units 75 V +30 ...

Page 2

... AP75N07AGP Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

Page 3

... Fig 2. Typical Output Characteristics 2.4 I =40A D V =10V G 2.0 1.6 1.2 0.8 0.4 -50 10 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.4 1.2 1.0 C 0.8 0.6 0.4 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP75N07AGP 10V . Drain-to-Source Voltage ( 100 150 200 Junction Temperature ( ...

Page 4

... AP75N07AGP Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area 160 120 ...

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