AP75N07GS Advanced Power Electronics Corp., AP75N07GS Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP75N07GS

Manufacturer Part Number
AP75N07GS
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP75N07GS

Vds
75V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
11
Qg (nc)
83
Qgs (nc)
10
Qgd (nc)
51
Id(a)
80
Pd(w)
300
Configuration
Single N
Package
TO-263
▼ Low Gate Charge
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
V
V
I
I
I
P
E
T
T
Rthj-c
Rthj-a
Rthj-a
Data & specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP75N07GP)
are available for low-profile applications.
STG
J
DS
GS
D
AS
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Maximum Thermal Resistance, Junction-ambient
Parameter
1
Parameter
G
GS
GS
@ 10V
@ 10V
3
4
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
RoHS-compliant Product
-55 to 175
-55 to 175
5
G
Rating
BV
R
I
D
+20
320
300
450
75
80
70
DS(ON)
D
2
G
DSS
S
AP75N07GS/P
Value
D
0.5
40
62
S
TO-220(P)
TO-263(S)
11mΩ
200902235
Units
W/℃
Units
℃/W
℃/W
℃/W
75V
80A
mJ
W
V
V
A
A
A
1

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AP75N07GS Summary of contents

Page 1

... Maximum Thermal Resistance, Junction-ambient (PCB mount) Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice RoHS-compliant Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter 4 @ 10V GS @ 10V Parameter AP75N07GS/P BV 75V DSS R 11mΩ DS(ON) I 80A D G TO-220( TO-263(S) S Rating ...

Page 2

... AP75N07GS/P Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... Fig 2. Typical Output Characteristics 2.4 I =40A D V =10V G 2.0 1.6 1.2 0.8 0 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.2 1.4 0 Fig 6. On-Resistance vs. Drain Current AP75N07GS/P 10V C 7.0 V 5.0V 4.5V V =3. Drain-to-Source Voltage (V) 75 100 125 150 175 Junction Temperature ( =4. =10V ...

Page 4

... AP75N07GS 120 Q , Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...

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