AP9950AGP-HF Advanced Power Electronics Corp., AP9950AGP-HF Datasheet

AP9950AGP-HF

Manufacturer Part Number
AP9950AGP-HF
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9950AGP-HF

Vds
68V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
10.5
Qg (nc)
58
Qgs (nc)
14
Qgd (nc)
24
Id(a)
70
Pd(w)
92.6
Configuration
Single N
Package
TO-220
▼ Simple Drive Requirement
▼ Lower Gate Charge
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
P
P
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial
through-hole applications.
D
D
DM
STG
J
DS
GS
D
D
@T
@T
@T
@T
C
C
Symbol
Symbol
C
A
=25℃
=100℃
=25℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maixmum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
GS
GS
G
@ 10V
@ 10V
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Halogen-Free Product
G
-55 to 150
-55 to 150
D
Rating
BV
R
I
S
D
92.6
+20
240
68
70
45
AP9950AGP-HF
DS(ON)
2
DSS
Value
1.35
62
TO-220(P)
10.5mΩ
201107015
Units
Units
℃/W
℃/W
68V
70A
W
W
V
V
A
A
A
1

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AP9950AGP-HF Summary of contents

Page 1

... Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maixmum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP9950AGP-HF Halogen-Free Product BV 68V DSS R 10.5mΩ DS(ON) I 70A D G TO-220( Rating Units 68 ...

Page 2

... AP9950AGP-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... Fig 2. Typical Output Characteristics 2.4 I =40A D V =10V G 2.0 1.6 1.2 0.8 0.4 -50 150 o C) Fig 4. Normalized On-Resistance 2.0 I =250uA D 1.6 1 0.8 0.4 0.0 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. AP9950AGP-HF 10V 150 C C 9.0V 8.0V 7.0V V =6. Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 o ...

Page 4

... AP9950AGP- =30A D V =56V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 Operation in this area limited by R 100 DS(ON = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS ...

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