AP9950GP Advanced Power Electronics Corp., AP9950GP Datasheet
AP9950GP
Specifications of AP9950GP
Related parts for AP9950GP
AP9950GP Summary of contents
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... Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maixmum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP9950GP RoHS-compliant Product BV 70V DSS R 12mΩ DS(ON) I 70A D G TO-220( Rating Units ...
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... AP9950GP Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...
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... Fig 2. Typical Output Characteristics 2.4 I =40A D V =10V G 2.0 1.6 1.2 0.8 0.4 - Fig 4. Normalized On-Resistance 1.6 1 0.8 0.4 0.0 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. AP9950GP 10V o C 7.0V 6.0V 5.0V V =4. Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 150 Junction Temperature ( ...
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... AP9950GP =35V DS V =42V =56V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...