Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP92T12GP-HF

Manufacturer Part NumberAP92T12GP-HF
DescriptionAdvanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
ManufacturerAdvanced Power Electronics Corp.
AP92T12GP-HF datasheet
 

Specifications of AP92T12GP-HF

Vds120VVgs±20V
Rds(on) / Max(m?) Vgs@10v8.5Qg (nc)97
Qgs (nc)27Qgd (nc)8
Id(a)130Pd(w)375
ConfigurationSingle NPackageTO-220
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Advanced Power
Electronics Corp.
▼ Simple Drive Requirement
▼ Lower On-resistance
▼ RoHS Compliant & Halogen-Free
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial
through-hole applications.
Absolute Maximum Ratings
Symbol
V
Drain-Source Voltage
DS
V
Gate-Source Voltage
GS
I
@T
=25℃
Continuous Drain Current (Chip)
D
C
Continuous Drain Current, V
I
@T
=25℃
D
C
Continuous Drain Current, V
I
@T
=100℃
D
C
I
Pulsed Drain Current
DM
P
@T
=25℃
Total Power Dissipation
D
C
T
Storage Temperature Range
STG
T
Operating Junction Temperature Range
J
Thermal Data
Symbol
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maixmum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
G
S
Parameter
3
@ 10V
GS
@ 10V
GS
1
Parameter
AP92T12GP-HF
Halogen-Free Product
BV
120V
DSS
R
8.5mΩ
DS(ON)
I
130A
D
G
TO-220(P)
D
S
Rating
Units
120
V
+20
V
130
A
120
A
95
A
300
A
375
W
-55 to 175
-55 to 175
Value
Units
0.4
℃/W
62
℃/W
200912091
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AP92T12GP-HF Summary of contents

  • Page 1

    ... Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maixmum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter 3 @ 10V GS @ 10V GS 1 Parameter AP92T12GP-HF Halogen-Free Product BV 120V DSS R 8.5mΩ DS(ON) I 130A D G TO-220( Rating Units 120 ...

  • Page 2

    ... AP92T12GP-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

  • Page 3

    ... D V =10V 2.6 G 2.2 1.8 1.4 1.0 0.6 0.2 -50 150 200 o C) Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 1 0.8 0.4 0.0 1 1.2 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP92T12GP- 175 C C 10V 9.0V 8.0V 7.0V V =6. Drain-to-Source Voltage ( 100 150 200 Junction Temperature ( ...

  • Page 4

    ... AP92T12GP- =96V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 Operation in this area limited by R DS(ON) 100 = Single Pulse 1 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...