AP92T12GP-HF Advanced Power Electronics Corp., AP92T12GP-HF Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP92T12GP-HF

Manufacturer Part Number
AP92T12GP-HF
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP92T12GP-HF

Vds
120V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
8.5
Qg (nc)
97
Qgs (nc)
27
Qgd (nc)
8
Id(a)
130
Pd(w)
375
Configuration
Single N
Package
TO-220
▼ Simple Drive Requirement
▼ Lower On-resistance
▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
I
P
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial
through-hole applications.
D
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
@T
C
C
C
Symbol
Symbol
C
=25℃
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Chip)
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maixmum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
GS
GS
G
@ 10V
@ 10V
3
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Halogen-Free Product
G
-55 to 175
-55 to 175
D
Rating
BV
R
I
S
D
120
+20
130
120
300
375
95
DS(ON)
AP92T12GP-HF
DSS
Value
0.4
62
TO-220(P)
8.5mΩ
200912091
120V
130A
Units
Units
℃/W
℃/W
W
V
V
A
A
A
A
1

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AP92T12GP-HF Summary of contents

Page 1

... Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maixmum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter 3 @ 10V GS @ 10V GS 1 Parameter AP92T12GP-HF Halogen-Free Product BV 120V DSS R 8.5mΩ DS(ON) I 130A D G TO-220( Rating Units 120 ...

Page 2

... AP92T12GP-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... D V =10V 2.6 G 2.2 1.8 1.4 1.0 0.6 0.2 -50 150 200 o C) Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 1 0.8 0.4 0.0 1 1.2 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP92T12GP- 175 C C 10V 9.0V 8.0V 7.0V V =6. Drain-to-Source Voltage ( 100 150 200 Junction Temperature ( ...

Page 4

... AP92T12GP- =96V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 Operation in this area limited by R DS(ON) 100 = Single Pulse 1 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...

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