AP92T12GP-HF Advanced Power Electronics Corp., AP92T12GP-HF Datasheet - Page 2

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP92T12GP-HF

Manufacturer Part Number
AP92T12GP-HF
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP92T12GP-HF

Vds
120V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
8.5
Qg (nc)
97
Qgs (nc)
27
Qgd (nc)
8
Id(a)
130
Pd(w)
375
Configuration
Single N
Package
TO-220
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
BV
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
R
V
t
Q
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 120A.
AP92T12GP-HF
Electrical Characteristics@T
Source-Drain Diode
DSS
GSS
d(on)
r
d(off)
f
rr
fs
GS(th)
SD
DS(ON)
iss
oss
rss
g
g
gs
gd
rr
DSS
Symbol
Symbol
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
Parameter
2
2
2
2
j
=25
o
C(unless otherwise specified)
2
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
f=1.0MHz
f=1.0MHz
I
I
dI/dt=100A/µs
D
D
S
S
GS
GS
DS
DS
DS
GS
DS
GS
DS
GS
DS
G
D
=30A
=30A
=30A, V
=10A, V
=2Ω
=3.3Ω,V
=0V, I
=10V, I
=V
=10V, I
=96V, V
= +20V, V
=96V
=10V
=60V
=0V
=25V
GS
Test Conditions
Test Conditions
, I
D
GS
GS
D
=250uA
D
D
GS
=250uA
GS
=30A
=0V
=0V
=30A
=10V
DS
=0V
=0V
Min.
Min.
120
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
4600 7360
Typ.
Typ.
800
260
260
62
97
27
48
27
96
42
60
80
2
-
-
-
-
-
-
+100
Max. Units
Max. Units
155
8.5
1.3
25
5
-
-
-
-
-
-
-
-
-
-
-
-
-
mΩ
uA
nA
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
2

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