Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP92T12GP-HF

Manufacturer Part NumberAP92T12GP-HF
DescriptionAdvanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
ManufacturerAdvanced Power Electronics Corp.
AP92T12GP-HF datasheet
 


Specifications of AP92T12GP-HF

Vds120VVgs±20V
Rds(on) / Max(m?) Vgs@10v8.5Qg (nc)97
Qgs (nc)27Qgd (nc)8
Id(a)130Pd(w)375
ConfigurationSingle NPackageTO-220
1
Page 1
2
Page 2
3
Page 3
4
Page 4
Page 4/4

Download datasheet (96Kb)Embed
Prev
AP92T12GP-HF
12
I
= 30 A
D
V
=96V
DS
10
8
6
4
2
0
0
20
40
60
Q
, Total Gate Charge (nC)
G
Fig 7. Gate Charge Characteristics
1000
Operation in this
area limited by
R
DS(ON)
100
10
o
T
=25
C
c
Single Pulse
1
0.01
0.1
1
10
V
, Drain-to-Source Voltage (V)
DS
Fig 9. Maximum Safe Operating Area
V
DS
90%
10%
V
GS
t
t
r
d(on)
Fig 11. Switching Time Waveform
6000
5000
4000
3000
2000
1000
0
1
80
100
120
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
100us
1ms
0.1
10ms
0.02
100ms
DC
0.01
0.00001
100
1000
Fig 10. Effective Transient Thermal Impedance
V
10V
t
t
d(off)
f
Fig 12. Gate Charge Waveform
f=1.0MHz
5
9
13
17
21
25
V
, Drain-to-Source Voltage (V)
DS
0.2
0.1
0.05
P
DM
t
T
0.01
Duty factor = t/T
Peak T
= P
x R
j
DM
thjc
Single Pulse
0.0001
0.001
0.01
0.1
t , Pulse Width (s)
G
Q
G
Q
Q
GS
GD
Charge
C
iss
C
oxx
C
rss
29
+ T
C
1
Q
4